Product Summary

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. The 2SC3356 has dynamic range and good current characteristic.

Parametrics

2SC3356 absolute maximum ratings: (1)Collector to Base Voltage VCBO: 20 V; (2)Collector to Emitter Voltage VCEO: 12 V; (3)Emitter to Base Voltage VEBO: 3.0 V; (4)Collector Current IC: 100 mA; (5)Total Power Dissipation PT: 200 mW; (6)Junction Temperature Tj: 150 ℃; (7)Storage Temperature Tstg: -65 to +150 ℃.

Features

2SC3356 features: (1)Low Noise and High Gain. NF = 1.1 dB TYP, Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz; (2)High Power Gain. MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

Diagrams

2SC3356 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC3356
2SC3356

Other


Data Sheet

Negotiable 
2SC3356 R24
2SC3356 R24

Other


Data Sheet

Negotiable 
2SC3356 R25
2SC3356 R25

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Data Sheet

Negotiable 
2SC3356F
2SC3356F

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2SC3356-R24/R25
2SC3356-R24/R25

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Data Sheet

Negotiable 
2SC3356R25/R24
2SC3356R25/R24

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Data Sheet

Negotiable 
2SC3356-T1B R24
2SC3356-T1B R24

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Data Sheet

Negotiable 
2SC3356-T1B R25
2SC3356-T1B R25

Other


Data Sheet

Negotiable